Linearity semi-conductive pressure sensor

ABSTRACT

A pressure sensor system involves a semi-conductive diaphragm electrode overlying a cavity in a semiconductor chip, with the center of the diaphragm secured to a mesa extending upwardly from the cavity. A second electrode is implemented by a heavily doped raised ring between the mesa and the periphery of the chip at the ring of maximum deflection of the diaphragm. The raised ring electrode is heavily doped with one polarity, with light doping near the base of the raised area, and the remainder of the cavity is heavily doped with the opposite polarity. The plot of Linearity Error versus width of the ring electrode, has a minimum, and the width of the ring electrode and related constructional features are selected to conform to the minimum point of the linearity function. The reference capacitor is arcuate in configuration and extends part way around and in immediate proximity to the sensor diaphragm.

FIELD OF THE INVENTION

This invention relates to semi-conductive pressure sensors.

BACKGROUND OF THE INVENTION

It has previously been proposed to make pressure sensors ofsemiconductor material by so-called micromachining, involving oxidation,masking, etching and other known semiconductor processing steps; andU.S. Pat. No. 6,211,558 granted Apr. 3, 2001, and U.S. Pat. No.6,352,874 disclose such techniques.

However, the pressure sensors of these references are not as linear asmight be desired; and it would also be desirable to further reduce thesize of the sensor systems.

In pressure sensor systems, the capacitance of a diaphragm type variablecapacitance may be compared to a fixed reference capacitor and theresultant output provides an indication of the pressure applied to thediaphragm. U.S. Pat. No. 4,398,426 granted Aug. 16, 1983 discloses asystem of this type.

SUMMARY OF THE INVENTION

In accordance with one illustrative embodiment of the present invention,linearity, reliability and stability are enhanced in a compactsemi-conductive pressure sensor having a flexible diaphragm, by formingthe assembly with a ring shaped raised electrode doped to provide a p-njunction at the base of ring shaped electrode. Further, the uppersurface of the ring shaped electrode is preferably highly doped. Inaddition, the reference capacitor preferably has about the samecapacitance as the variable diaphragm capacitor at maximum diaphragmdeflection; and the reference capacitance is preferably arcuate shapedand extends closely around the diaphragm to minimize space on thesemi-conductive chip while still having a capacitance comparable to thatof the diaphragm capacitor. Also, with the reference capacitor and thevariable capacitor being in immediate proximity, they are maintained atthe same temperature, thus avoiding errors from temperature disparity.

In addition to forming the reference capacitor, and the cavity andraised electrode with which the diaphragm co-acts, the silicon chip mayhave transistors formed thereon for processing the variable capacitanceof the diaphragm, and providing a linear voltage output with changes inpressure.

The linearity error of the diaphragm type pressure sensor may becalculated as a function of the effective width or area of the ringelectrode, and this function has a minimum at the optimum effectivewidth of the ring electrode. The pressure sensor is preferablyconstructed with the ring electrode having an effective width or areacorresponding to this minimum.

The construction of the variable sensing capacitor may be accomplishedby known Micro Electro-Mechanical Systems (or MEMS) technology,involving masking, etching and doping, with such individual steps beinggenerally known in the art, as indicated in texts, and in the followingpatents: U.S. Pat. No. 6,211,448; U.S. Pat. No. 5,966,617; U.S. Pat. No.5,578,843; and U.S. Pat. No. 5,576,251.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a pressure sensor system illustratingthe principles of the invention;

FIG. 2 is a plan view looking down on the pressure sensor system of FIG.1, and showing a silicon die or chip mounted on the larger ceramicsubstrate;

FIG. 3 is an enlarged plan view of the silicon chip which appears as asmall rectangle in the showing of FIG. 2;

FIG. 4 is a schematic showing of the pressure sensor cross-section withthe diaphragm in a partially deflected configuration;

FIG. 5 is a plot of the gap between the diaphragm and the underlyingcavity with the raised ring shaped electrode;

FIG. 6A is a schematic showing of the doping of the ring shapedelectrode and the cavity of the pressure sensor;

FIG. 6B is a plot of the capacitance contributions of the upper surfaceof the doped ring shaped electrode and areas of the associated cavity;

FIG. 7 is a showing of the implant or doping distribution of the bottomelectrode surface;

FIG. 8 is an enlarged plan view of the diaphragm which deflects andchanges capacitance with variable applied pressure, and the adjacentarcuate reference capacitor;

FIG. 9 is a graph of (1) linearity error and (2) “gain” plotted againsteffective width of the ring shaped electrode; and

FIG. 10 is a schematic block diagram indicating how the capacitancevariations of the diaphragm may be converted into electrical signals.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

While the specification describes particular embodiments of the presentinvention, those of ordinary skill can devise variations of the presentinvention without departing from the inventive concept.

The present detailed description will be divided into two parts, (1) ageneral description of the embodiments of the invention, and (2) amathematical analysis.

Before going into the system in detail, however, some backgroundinformation may usefully be provided. First, the dimensions ofcomponents of the invention may be relatively small, and may bereferenced in terms of microns, sometimes using the symbol “μm” andbeing equal to 10⁻⁶ meters. Where a centimeter is equal to about 0.39inches, and a micron is 10⁻⁴ centimeters, each micron is 1/10,000 of acentimeter. Reference is also made to nanometers, which may beabbreviated to nm, and which are equal to 10⁻⁹ meters. A nanometer isequal to one thousandth of a micron.

Regarding semiconductor materials, the principal semiconductors aregermanium and silicon, with silicon being widely used. In its atomicstructure, silicon has four electrons in its outer ring. As is wellknown, the elements arsenic and phosphorous are near silicon in thePeriodic Table of elements, but have 5 electrons in their outer ring.When silicon is doped with these elements, four electrons are sharedwith adjacent silicon atoms, leaving the fifth electron for electricalconduction, forming an “n-type” semiconductor. Similarly, boron has onlythree electrons in its outer shall and the resultant missing electron isknown as a “hole”, forming “p-type” semi-conductive material in whichelectrical conduction is accomplished by mobile “holes” acting much likepositive electrons.

The conductivity of silicon can be varied, by varying the concentrationof the doping material or dopant, such as the arsenic or boron. As ithappens, silicon has concentration of about 10²³ or 10²⁴ atoms per cubiccentimeter. For strong doping or implantation (of boron or arsenic forexamples) the concentration of the dopant would be about 10²¹ or 10²²atoms per cubic centimeter, giving a concentration of about 10% of thedopant. This strong or heavy doping by a p-type element such as boronmay be referenced as p++ doping. Weaker doping levels, such as 10¹⁶ or10¹⁷ atoms per cubic centimeter will be represented “p-” for example forp-type doping.

Now, referring back to FIGS. 1 and 2 of the drawings, FIG. 1 is aperspective view and FIG. 2 is a top plan view of the pressure sensorsystem, with the ceramic chip 12 forming the substrate, and the tube 14constituting an inlet for the pressure to be measured. Printed outputcircuitry is formed on the upper surface of chip 12.

A silicon die 16 is visible in the plan view of FIG. 2, and an enlargedplan view of this silicon chip or die is presented in FIG. 3.

Incidentally, concerning dimensions, the ceramic chip 12 is about 1.1 cmby 1.6 cm; and the cylindrical pressure inlet 14 has a diameter of about0.5 cm or 0.6 cm. the silicon chip or die is about two millimeters longand about 1.5 mm wide.

Now, referring back to FIG. 3 of the drawings, the silicon die includesthe diaphragm 18 and the reference capacitor 20 which has an arcuateconfiguration and is in close proximity to the diaphragm 18. Inaddition, the reference capacitor and the variable capacitor at maximumdeflection have approximately the same capacitance.

In the areas 22 and 24 of the silicon chip or die 16, integratedcircuits are formed. These circuits convert the varying capacitance ofdiaphragm 18 into usable electrical signals indicating the appliedpressure. Also shown in FIG. 3 are the output pad 26 and the outputadjustment pads 28.

FIG. 4 is a diagrammatic cross-sectional view of the circular diaphragm32 mounted at its edges 34 to the surrounding silicon chip or die, andsecured at its center to the central post 36. A ring shaped electrode 38extends around the post 36. Note that this drawing is not to scale, andwith the radius of the diaphragm being about 120 μm (microns or 10⁻⁶meters) and the depth being only 1100 nm (nanometers or 10⁻⁹ meters), or1.1 microns. Accordingly, the cavity is quite shallow, with the maximumdepth being only 1.1 microns, as compared with a radius of 120 microns.

FIG. 5 is a plot of the gap between the diaphragm and the cavity bottomplotted against the radius of the cavity, at maximum diaphragmdeflection. Note that FIG. 5 shows the plot against the radius, whileFIG. 4 is a schematic showing of the full diameter of the diaphragm andassociated cavity. In FIG. 5, note that the gap in area 42, in thevicinity of the ring shaped electrode 38, is relatively small, while thegap 44 near the center of the diaphragm is quite large, as is the gap 46between the ring electrode 36 and the periphery 34 of the diaphragm.Accordingly, with capacitance being inversely proportional to the spacebetween electrodes, the raised ring shaped electrode contributes in amajor way to the sensor capacitance.

FIG. 6A shows the preferred doping of the ring electrode and theadjacent cavity, with FIG. 6A again being a radial showing, with thecenter of the diaphragm to the left of FIG. 6A. Note that the uppersurface of the ring electrode 36 is heavily doped with boron, forming ap++ zone, and the lower portion 54 of the ring electrode 36 is onlyweakly doped, as indicated by the “p-” designation. The remainder of thecavity, including the inner area 58 and the outer area 60, are dopedstrongly with an n-type dopant such as arsenic or phosphorous, fromcolumn V-A of the Periodic Table. These areas are labeled “n++” toindicate heavy doping. Note that there are p-n junctions 62 and 64 atthe base of the ring shaped electrode 36.

FIG. 6B indicates the contributions to total capacitance from the areaswithin the cavity. Reference numeral 72 designates the principalcontribution to capacitance from the p++ area on the facing surface ofring electrode 36; reference numerals 74 and 76 designate thecapacitance contributions from areas on the sides of the ring electrode;and reference numerals 78 and 80 refer to capacitance contributions fromareas of the cavity immediately adjacent the ring electrode 36. Thearrows from FIG. 6B to FIG. 6A indicate the designated areascontributing to the total capacitance. In FIG. 6B the capacitance isindicated in terms of “fF” or “Fremto-Farads” or 10⁻¹⁵ farads, with afarad being the basic unit for the measurement of capacitance.

FIG. 7 is a schematic showing of the dopant implant distribution on thebottom electrode surface of both the electrode and cavity facing thediaphragm, and the reference electrode, which is formed concurrently.The p++ area 86 on the upper surface of the ring electrode isparticularly to be noted, along with the comparable p++ area 88 on thereference electrode. The heavily doped n++ areas 90 and 92 on the ringelectrode and the reference capacitor electrode, are also to be noted.

FIG. 8 is a diagrammatic showing of the doping of the diaphragm of thevariable capacitor, and of the upper electrode of the referencecapacitor. In FIG. 8, the p++ area 94 overlies the ring electrode area86 of FIG. 7, and the p++ area 96 of the upper electrode of thereference capacitor overlies the similarly doped area 88 of the lowerelectrode of the reference capacitor.

As noted elsewhere in this specification, the capacitance of thereference electrode is preferably about the same as the maximumcapacitance of the sensor capacitor. The upper and lower electrode ofthe reference capacitor may be spaced apart by dielectric material, ormay be configured as a diaphragm but limited in deflection so that thereference capacitance is not substantially changed with varyingpressure.

In FIG. 8 the metallic electrical connections are shown schematicallyfor connecting the variable and reference capacitors to the associatedcircuitry.

With regard to the shape of the reference capacitor as shown in FIGS. 3,7 and 8, it is preferably arcuate and extends around the diaphragm forless than 270° and preferably less than 180°; and is preferablyimmediately adjacent the diaphragm. Space on the silicon chip, as shownin FIG. 3, is at a premium, and this configuration minimizes the spaceoccupied by the reference capacitor consistent with the size of thereference capacitor being of the same order of magnitude and preferablyabout equal to that of the diaphragm capacitor.

FIG. 9 is a function of sensor “gain” 102 and linearity error 104,plotted against effective width of the ring electrode. It may be notedthat, with a predetermined effective width of the ring electrode, thelinearity error reaches a minimum 106 where the departure from linearityis about 0.42%, or less than one-half of one percent.

FIG. 10 shows one typical circuit for converting the capacitancevariations of the diaphragm capacitor to electrical signals representingthe input pressure. In FIG. 10 current from the source 112 is routed bythe switching circuit 114 to either the reference capacitor 116 or tothe variable capacitor 118. During one part of the cycle, a chargingcurrent is applied to reference capacitor 116. When the voltage onreference capacitor 116 reaches a predetermined reference voltage level,see 121, the comparator circuit 119 provides an output signal tobistable circuit 120 which provides both an output signal, and alsoswitches the input charging source 112 to apply current to the variablecapacitor 118. When variable capacitor 118 is charged to a referencelevel determined by an input reference signal at 122, the comparator 124provides an output signal to bitable Circuit 120. Circuit 120 providesan output signal and also actuates switching circuit 114 to direct thecharging current to reference capacitor 116. Accordingly, the outputfrom bistable circuit 120 is a function of the capacitance of thevariable capacitor 118, and thus is an indication of the pressureapplied to the diaphragm. It is noted that the circuit of FIG. 10 iswell known, and is one of many circuits which can be employed. Further,circuitry such as that shown in FIG. 10 may be implemented by theintegrated circuits on areas 22 or 24 of FIG. 3.

In the foregoing initial section of the specification, the drawings andpreferred embodiments have been described. In the following section, theassociated mathematical analysis will be presented. This mathematicalanalysis is against the background of the sensor as describedhereinabove with the capacitance of the reference capacitor being C_(r)and the variable capacitance of the sensing diaphragm capacitor beingdesignated C_(s).

Initially, the transfer function of the pressure sensor is a severalvariable function, V_(out)=ƒ(ξ, α, β, λ), where ξ=C_(r)/C_(s), is thecapacitance ratio of reference capacitor, C_(r), to variable sensorcapacitor, C_(s). We assume that the value of sensor capacitor, C_(s),capacitor changes due to applied pressure, p while variation of thereference capacitor is small. The other variables are on-chipparameters: the parameter used for offset adjustment is denoted by α,the gain adjustment parameter is denoted by β, and the linearityadjustment parameter is denoted below either by LIN or by λ. The sensortransfer function is approximated by the equation $\begin{matrix}{V_{out} = {V_{dd} \cdot \frac{\left( {1 - {\alpha \cdot \xi}} \right)}{\beta \cdot \left( {1 - {\lambda \cdot \xi}} \right)}}} & {{Eq}.\quad(1)}\end{matrix}$Where V_(out) is sensor output, V_(dd) is supply voltage.

Consider sensor parameters that directly effect linearity of arationmetric sensor output. By definition, sensor output shows zerononlinearity error if the sensor transfer function can be approximatedby a linear function of pressure. However, in the reality, sensortransfer function (Eq.(1)) always deviates from the ideal output.Difference between linear output and sensor transfer function is calledapproximation error. The integrated level of approximation error isconventionally estimated by L2-norm value (see “Mathematical Handbookfor Scientists and Engineers” by G. A. Korn, T. M. Korn). By definition,the norm is calculated as a dot product of approximation errorN_(L2)≡||δV_(Out)|| |_(L2)=(δV_(Out), δV_(Out))^(1/2), where δV_(Out)denotes sensor output approximation error over full pressure range, and( . . . , . . . ) is function dot product(δ  V_(Out), δ  V_(Out)) = (p_(max) − p_(min))⁻¹ ⋅ ∫_(p_(min))^(p_(max))δ  V_(Out)(ζ) ⋅ δ  V_(Out)(ζ)  𝕕ζ.We define approximation error of a sensor transfer function (Eq.1) asdeviation of sensor output from ideal linear output signal$\begin{matrix}{{\delta\quad V_{Out}} = {\left. V_{Out} \middle| {}_{p_{\min}}{{\cdot {B_{0}(p)}} + V_{Out}} \right.❘_{\quad_{p_{\max}}}{{\cdot {B_{1}(p)}} - {V_{out}(p)}}}} & {{Eq}.\quad(2)}\end{matrix}$where V_(out)(p) is sensor output transfer function and B₀, B₁ are firstorder B-splines${B_{0}(p)} = {{\frac{p_{\max} - p}{p_{\max} - p_{\min}}{and}\quad{B_{1}(p)}} = {\frac{p - p_{\min}}{p_{\max} - p_{\min}}.}}$In order to generalize analysis results we exclude β parameter from theanalysis. Hence, sensor output (Eq.1) is written in dimensionless form$\begin{matrix}{{{\overset{\sim}{V}}_{Out} \equiv \frac{V_{out} \cdot \beta}{V_{dd}}} = \frac{\left( {1 - {\alpha \cdot \xi}} \right)}{\left( {1 - {\lambda \cdot \xi}} \right)}} & {{Eq}.\quad(3)}\end{matrix}$In addition, in order to simplify calculations, parameter α also can beeliminated from the analysis. In order to do so we use constrain {tildeover (V)}_(out)|_(p) _(min) =0, which yields α=1/ξ|_(p) _(min) . Hereand below we consider a case in which${\frac{\partial C_{r}}{\partial p} ⪡ {\frac{\partial C_{s}}{\partial p}\quad{and}\quad\xi}}❘_{p_{\min}}{{> \xi}❘_{p_{\max}}.}$As a result, sensor transfer function becomes $\begin{matrix}{{{\overset{\sim}{V}}_{Out} \equiv \frac{V_{out} \cdot \beta}{V_{dd}}} = \frac{\left( {\xi ❘_{p_{\min}}{{- \xi}❘_{p}}} \right)}{{\left( {{1 - \lambda}{{\cdot \xi}❘_{p}}} \right) \cdot \xi}❘_{p_{\min}}}} & {{Eq}.\quad(4)}\end{matrix}$where ξ|_(p)=C_(r)/C_(s) is a function of pressure. Capacitance ratio ξcan be approximated by a second order polynomial function of pressureξ|_(p)=ξ|_(p) _(min) ·B ₀(p)+ξ|_(p) _(max) ·B ₁(p)+[4·ξ|_(p) _(x)−2·(ξ|_(p) _(min) +ξ|_(p) _(max) )]·B ₀(p)·B ₁(p)  Eq.(5)where p_(x)=0.5·(p_(max)+p_(min)) is median of full pressure range. Itis known from mathematics that any second order polynomial approximationcan be entirely characterized by a set of three independent parameters.Hence, we use below a parameter set which includes three independentparamenters. The first parameter is the value of ξ|_(p) _(max) . Thesecond parameter is capacitance ratio gain, g, and the third parameteris capacitance ratio nonlinearity error, n_(ξ).The other variables needed for the analysis can be calculated by usingabove parameter set. For example, by the definition, capacitance ratiogain is calculated by the equation g=(ξ|_(p) _(min) −ξ|_(p)_(max))/ξ|_(p) _(max) , which yieldsξ|_(p) _(min) =(1+g)·ξ|_(p) _(max) .  Eq.(6)By the definition, capacitance ratio nonlinearity error, n_(ξ) iscalculated by the equation $\begin{matrix}{{n_{\xi} = \frac{{\left( {\xi ❘_{p_{\max}}{{+ \xi}❘_{p_{\min}}}} \right) - {2 \cdot \xi}}❘_{p_{x}}}{2 \cdot \left( {\xi ❘_{p_{\max}}{{- \xi}❘_{p_{\min}}}} \right)}},} & {{Eq}.\quad(7)}\end{matrix}$which yields, ξ|_(p) _(x) =ξ|_(p) _(max) ·(0.5−n_(ξ))+ξ|_(p) _(min)·(0.5+n_(ξ)). As a result, the value of ξ|_(p) _(x) is calculated byequationξ|_(p) _(x) =(1+g·(0.5+n _(ξ)))·ξ|_(p) _(max)   Eq.(8)If we substitute the Eq.(6-8) into the Eq.(5), we getξ|_(p)=[(1+g)·B ₀(p)+B ₁(p)+4·g·n _(ξ) ·B ₀(p)·B ₁(p)]·ξ|_(p) _(max)  Eq.(9)If we substitute the Eq.(9) into the Eq.(2,4) we can calculate the valueof norm-L₂, N_(L2)≡||δ{tilde over (V)}_(Out)|| |_(L) ₂ =(δ{tilde over(V)}_(Out), δ{tilde over (V)}_(Out))^(1/2), as a function ofnonlinearity error and capacitance ratio gain. By definition, full spannonlinearity error of sensor output, n_(out), is calculated by theequation $\begin{matrix}{n_{out} = \frac{{{0.5 \cdot \left( {V_{out}❘_{\quad_{p_{\max}}}{{+ V_{out}}❘_{\quad_{p_{\min}}}}} \right)} - V_{out}}❘_{\quad_{p_{x}}}}{V_{out}❘_{\quad_{p_{\max}}}{{- V_{out}}❘_{\quad_{p_{\min}}}}}} & {{Eq}.\quad(10)}\end{matrix}$where p_(x)=0.5·(p_(max)+p_(min)) is the median of full pressure range.Upon substitution of the Eq.(1) into the Eq.(10) yields $\begin{matrix}{{n_{out} = \frac{{{0.5 \cdot \begin{bmatrix}\begin{matrix}{\xi ❘_{\quad_{p_{\max}}}{\cdot \left( {{1 - {\lambda \cdot \xi}}❘_{\quad_{p_{\max}}}} \right)^{- 1}}} \\{{+ \xi}❘_{\quad_{p_{\min}}} \cdot}\end{matrix} \\\left( {{1 - {\lambda \cdot \xi}}❘_{\quad_{p_{\min}}}} \right)^{- 1}\end{bmatrix}} - \xi}❘_{\quad_{p_{x}}}{\cdot \left( {{1 - {\lambda \cdot \xi}}❘_{\quad_{p_{x}}}} \right)^{- 1}}}{\begin{matrix}{\xi ❘_{\quad_{p_{\max}}}{{\cdot \left( {{1 - {\lambda \cdot \xi}}❘_{\quad_{p_{\max}}}} \right)^{- 1}} -}} \\\left( {\xi ❘_{\quad_{p_{\min}}}{\cdot \left( {{1 - {\lambda \cdot \xi}}❘_{\quad_{p_{\min}}}} \right)^{- 1}}} \right)\end{matrix}}}{{{{where}\quad\xi}❘_{\quad_{p_{x}}}} = {\xi ❘_{\quad_{p_{\max}}}{{{\cdot \left( {0.5 - n_{\xi}} \right)} + \xi}❘_{\quad_{p_{\min}}}{\cdot {\left( {0.5 + n_{\xi}} \right).}}}}}} & {{Eq}.\quad(11)}\end{matrix}$The value of linearity adjustment parameter, λ₀, is solution of theequation n_(out)(λ₀)=0, which yields $\begin{matrix}{\lambda_{0} = \frac{{\left( {\xi ❘_{\quad_{p_{\max}}}{{+ \xi}❘_{\quad_{p_{\min}}}}} \right) - {2 \cdot \xi}}❘_{\quad_{p_{x}}}}{\begin{matrix}{\xi ❘_{\quad_{p_{\max}}}{{\cdot \left( {\xi ❘_{\quad_{p_{\min}}}{{- \xi}❘_{\quad_{p_{x}}}}} \right)} +}} \\{\xi ❘_{\quad_{p_{\min}}}{\cdot \left( {\xi ❘_{\quad_{p_{\max}}}{{- \xi}❘_{\quad_{p_{x}}}}} \right)}}\end{matrix}}} & {{Eq}.\quad(12)}\end{matrix}$The Eq.(12) can be reduced to the form$\lambda_{0} = {\frac{4 \cdot n_{\xi}}{{\left( {{4 \cdot n_{\xi}} + {g \cdot \left( {1 + {2 \cdot n_{\xi}}} \right)}} \right) \cdot \xi}❘_{\quad_{p_{\max}}}}.}$Constrain λ₀·ξ|_(p) _(max) <(1+g)⁻¹ yields a few additional limits tothe above parameters—Eq.(12) can be used for λ₀ calculations only if g>0and −g/(4+2·g)<n_(ξ)<0.5.Another important restriction of the design parameters is a requirementof small value for parameter λ<<1. Indeed, in order to show goodperformance sensor we must have relatively large output signal gain.However, if λ increases sensor output gain must decrease.We can prove the foregoing by considering the equation for die outputgain: $\begin{matrix}{{g_{v} \equiv \frac{{dV}_{out}}{V_{out}}} = {d\left( {\ln\left( V_{out} \right)} \right)}} & {{Eq}.\quad(13)}\end{matrix}$Upon substitution of the Eq.(1,3) into Eq.(13) yield $\begin{matrix}{g_{v} = {\left\lbrack {\frac{\lambda \cdot \xi}{\left( {1 - {\lambda \cdot \xi}} \right)} - \frac{\alpha \cdot \xi}{\left( {1 - {\alpha \cdot \xi}} \right)}} \right\rbrack \cdot g_{\xi}}} & {{Eq}.\quad(14)}\end{matrix}$where$g_{\xi} = {\frac{d\quad\xi}{\xi} = {\frac{{dC}_{r}}{C_{r}} - {\frac{{dC}_{s}}{C_{s}}.}}}$After some simple algebra the Eq.(14) becomes $\begin{matrix}{\frac{g_{v}}{\left( {g_{s} - g_{r}} \right)} = \frac{\left( {\alpha - \lambda} \right)}{\left( {1 - {\lambda \cdot \xi}} \right) \cdot \left( {1 - {\alpha \cdot \xi}} \right)}} & {{Eq}.\quad(15)}\end{matrix}$where$g_{s} = {{\frac{{dC}_{s}}{C_{s}}\quad{and}\quad g_{r}} = \frac{{dC}_{r}}{C_{r}}}$are respectively sensor and reference capacitor gain, and g_(r)<<g_(s).If α>λ≧0, maximal value of g_(v)/(g_(s)−g_(r)) ratio corresponds to λ=0and the value of sensor output gain g_(v) always decreases if the valueof the parameter λ increases. We will now consider a minimizationprocedure of capacitance ratio nonlinearity error, n_(ξ) for a MEMScapacitor design consists of flexible diaphragm covering sensor cavitywith a doped pattern located on the cavity bottom. If the flexiblediaphragm deflects down due to external pressure, the gap between thediaphragm surface and the cavity bottom decreases proportionally todiaphragm deflection. For such a case, capacitance is calculated by theequation. $\begin{matrix}\begin{matrix}{{C_{\zeta}(p)} = {\int_{A_{\zeta}}{{\Theta\left( {x,y} \right)} \cdot}}} \\{\left( {C_{p +}^{- 1} + C_{n +}^{- 1} + \frac{{{d\left( {x,y} \right)} - {w_{\zeta}\left( {p,x,y} \right)}}\quad}{ɛ_{o}}} \right)^{- 1}{\mathbb{d}x}{\mathbb{d}y}} \\{\zeta = \left\{ {s,r} \right\}}\end{matrix} & {{Eq}.\quad(16)}\end{matrix}$where A_(ζ) ε R² is MEMS capacitor area, d(x,y) is a function describingcavity depth variation, C_(p+) and C_(n+) is respectively surfacecapacitances of diaphragm surface and boron doped pattern, ε_(o) isdielectric permittivity of free space, and $\begin{matrix}{{\Theta\left( {x,y} \right)} = \left\{ {{\begin{matrix}1 & {\left( {x,y} \right) \in \Omega_{p++}} \\0 & {\left( {x,y} \right) \notin \Omega_{p++}}\end{matrix}\quad\Omega_{p++}} \Subset R^{2}} \right.} & {{Eq}.\quad(17)}\end{matrix}$is step function that defines boron doped region, Ω_(p++), on the bottomof MEMS cavity. Diaphragm deflection w=w(p, x, y) is a function ofpressure, p, and coordinates x and y. According to the theory ofelasticity the function w=w(p, x, y) must be a linear function ofpressure. To simplify notation the Eq.(17) is written in the form$\begin{matrix}{{{{C_{\zeta}(p)} = {\frac{ɛ_{o}}{d_{*}}{\int_{A_{\zeta}}{{{\Theta\left( {x,y} \right)} \cdot \left( {1 - {\Psi\left( {p,x,y} \right)}} \right)^{- 1}}\quad{\mathbb{d}x}{\mathbb{d}y}}}}};}{\zeta = \left\{ {s,r} \right\}}\begin{matrix}{{{{where}\quad d_{*}} = {{\left( {C_{p +}^{- 1} + C_{n +}^{- 1}} \right)ɛ_{o}} + d_{o}}},{d_{o}\quad{is}\quad a\quad{constant}},} \\{{and}\quad{\Psi_{\zeta}\left( {p,x,y} \right)}} \\{\equiv \frac{{w_{\zeta}\left( {p,x,y} \right)} + d_{0} - {d\left( {x,y} \right)}}{d_{*}}}\end{matrix}} & {{Eq}.\quad(18)}\end{matrix}$is a linear function of pressure. In the polar coordinate system theEq.(18) becomes${{C_{\zeta}(p)} = {\left( \frac{ɛ_{o}}{d_{*}} \right) \cdot {\int\limits_{A_{\zeta}\bigcap\Omega_{p++}}{\left( {1 - {\Psi_{\zeta}\left( {p,r} \right)}} \right)^{- 1}r{\mathbb{d}r}{\mathbb{d}\varphi}}}}};$ζ = {s, r} whereA_(ζ)⋂Ω_(p + +) = {(r, φ) ∈ R²; r ∈ [R_(min)^((ζ)), R_(max)^((ζ))]; φ ∈ [0, 2π]}and r=((x−x₀)²+(y−y₀)²)^(1/2) is radial coordinate of a polar coordinatesystem with origin in the point (x₀,y₀). The result of this analysis isshown graphically in FIG. 9 of the drawings.

CONCLUSION

In the foregoing detailed description and mathematical analysis, onespecific preferred embodiment has been disclosed and analyzed. Variouschanges and modifications may be made without departing from the spiritand scope of the invention. Thus, by way of example and not oflimitation, the arcuate reference capacitor configuration, locatedadjacent the diaphragm may be used with diaphragms not having a centralfixed post, or having other shapes. Also, the n-type and p-typesemi-conductive areas may be interchanged. The second electrode ispreferably raised, but could be in the form of a heavily doped area on aflat cavity bottom. The second ring electrode is also preferably locatedalong the line of maximum deflection of the diaphragm. The minimizationof non-linearity may be implemented with other diaphragm geometries.Novelty is present in some cases relative to individual features of theinvention, and is not limited to the complete combination as referencedin the illustrative embodiment of the invention included in the Summaryof the Invention. In some cases, for example, the center of thediaphragm may not be secured to a raised mesa from the cavity.Accordingly, the present invention is not limited to the specificembodiment shown in the drawings and mathematically analyzed.

1. A pressure sensor system comprising: a semiconductor chip; adiaphragm constituting a first electrode, formed on said chip; saiddiaphragm being formed of semi-conductive material; said diaphragmfacing a cavity in said chip with a second electrode in the form of adoped semiconductor raised area facing said diaphragm; said first andsecond electrodes constituting a sensing capacitor with a capacitancethat varies with deflection of said diaphragm; a reference capacitorformed on the surface of said chip in an arcuate configuration adjacentsaid diaphragm, said reference capacitor having a capacitance in thesame order of magnitude as said sensing capacitor; said cavity having araised mesa secured to the center of said diaphragm; said secondelectrode being substantially in the form of a raised ring extendingaround said mesa, and with said raised ring located between said mesaand the periphery of the diaphragm; said semiconductor chip having a p-njunction substantially at the base of the raised ring forming the secondelectrode. circuitry formed on said chip for converting capacitancevariations of said diaphragm relative to said reference capacitor, to asubstantially linear output with changes in pressure applied to saiddiaphragm; and bonding pads mounted on said chip to receive leads forcoupling to external circuitry.
 2. A pressure sensor system as definedin claim 1 wherein said capacitance of said reference capacitor issubstantially equal to that of the variable sensing capacitor.
 3. Apressure sensor system as defined in claim 1 wherein the dimensions ofsaid raised ring and the doping thereof are selected to conform to theminimum of the function of output signal linearity error versus thewidth of the ring electrode.
 4. A pressure sensor system as defined inclaim 1 wherein the ring shaped electrode is heavily doped with onesemi-conductive polarity at the surface thereof facing the diaphragm,and has lesser doping concentration toward the base of the ring, and theremainder of the cavity is doped with the opposite semi-conductivepolarity.
 5. A pressure sensor system as defined in claim 1 wherein saidreference capacitor extends around said diaphragm for substantiallyequal to or less than half way around said diaphragm.
 6. A pressuresensor system comprising: a semiconductor chip; a diaphragm formed onsaid chip; said diaphragm constituting a first electrode formed ofsemi-conductive material; said diaphragm facing a cavity in said chipwith a second electrode in the form of a doped semiconductor raised areafacing said diaphragm; said first and second electrodes constituting asensing capacitor with a capacitance that varies with deflection of saiddiaphragm; a reference capacitor formed on the surface of said chip inan arcuate configuration adjacent said diaphragm; circuitry formed onsaid chip for converting capacitance variations of said diaphragmrelative to said reference capacitor, to a substantially linear outputwith changes in pressure applied to said diaphragm; and bonding padsalso mounted on said chip to receive leads for coupling to externalcircuitry.
 7. A pressure sensor system as defined in claim 6 whereinsaid capacitance of said reference capacitor is substantially equal tothat of the variable sensing capacitor.
 8. A pressure sensor system asdefined in claim 6 wherein the dimensions of said second electrode andthe doping thereof provide a capacitance selected to minimize thelinearity error in output voltage versus pressure applied to deflectsaid diaphragm.
 9. A pressure sensor system as defined in claim 5wherein the second electrode is heavily doped with one semi-conductivepolarity at the surface thereof facing the diaphragm, and has a lesserdoping concentration of the same polarity toward the base of the secondelectrode, and the remainder of the cavity is doped with the oppositesemi-conductive polarity.
 10. A pressure sensor system comprising: asemiconductor chip; a diaphragm constituting a first electrode, formedon said chip; said diaphragm being formed of semi-conductive material;said diaphragm facing a cavity in said chip with a second electrode inthe form of a doped semiconductor raised area facing said diaphragm;said first and second electrodes constituting a sensing capacitor with acapacitance that varies with deflection of said diaphragm; and areference capacitor formed on the surface of said chip in an arcuateconfiguration adjacent said diaphragm, said reference capacitor having acapacitance in the same order of magnitude as said sensing capacitor.11. A pressure sensor system as defined in claim 10 wherein saidcapacitance of said reference capacitor is substantially equal to thatof the variable sensing capacitor.
 12. A pressure sensor system asdefined in claim 10 wherein the dimensions of said raised ring and thedoping thereof are selected to conform to the minimum of the function ofoutput signal linearity error versus the width of the ring electrode.13. A pressure sensor system as defined in claim 10 wherein saidreference capacitor extends around said diaphragm for substantiallyequal to or less than half way around said diaphragm.
 14. A pressuresensor system comprising: a semiconductor chip; a diaphragm formed onsaid chip; said diaphragm constituting a first electrode formed ofsemi-conductive material; said diaphragm facing a cavity in said chipwith a second electrode in the form of a doped semiconductor raised areafacing said diaphragm; said first and second electrodes constituting asensing capacitor with a capacitance that varies with deflection of saiddiaphragm; a reference capacitor formed on the surface of said chip inan arcuate configuration adjacent said diaphragm; and the secondelectrode being heavily doped with one semi-conductive polarity at thesurface thereof facing the diaphragm, and having lesser dopingconcentration toward the base of the second electrode and the remainderof the cavity being doped with the opposite semi-conductive polarity.15. A pressure sensor system as defined in claim 14 wherein saidcapacitance of said reference capacitor is substantially equal to thatof the variable sensing capacitor.
 16. A pressure sensor system asdefined in claim 14 wherein the dimensions of said raised ring and thedoping thereof are selected to conform to the minimum of the function ofoutput signal linearity error versus the width of the ring electrode.17. A pressure sensor system as defined in claim 14 further comprising araised mesa secured to the center of said diaphragm.
 18. A pressuresensitive system as defined in claim 14 wherein the second electrode isin the form of a ring.
 19. A pressure sensor system comprising: asemiconductor chip; a diaphragm constituting a first electrode, formedon said chip; said diaphragm being formed of semi-conductive material;said diaphragm facing a cavity in said chip with a second electrode inthe form of a doped semiconductor area facing said diaphragm; said firstand second electrodes constituting a sensing capacitor with acapacitance that varies with deflection of said diaphragm; a referencecapacitor formed on the surface of said chip; said cavity having araised mesa secured to the center of said diaphragm; said secondelectrode being substantially in the form of a ring extending aroundsaid mesa, and with said electrode being located between said mesa andthe periphery of the diaphragm; and said electrode being heavily dopedwith one semi-conductive polarity, and the remainder of said cavitybeing doped with the opposite semi-conductive polarity.
 20. A pressuresensor system as defined in claim 19 wherein the dimensions of saidsecond electrode and the doping thereof are selected to conform to theminimum of the function of the output signal linearity error versus thewidth of the second electrode.
 21. A pressure sensor system comprising:a semiconductor chip; a diaphragm constituting a first electrode, formedon said chip; said diaphragm being formed of semi-conductive material;said diaphragm facing a cavity in said chip with a second electrode inthe form of a doped semiconductor area facing said diaphragm; said firstand second electrodes constituting a sensing capacitor with acapacitance that varies with deflection of said diaphragm; a referencecapacitor formed on the surface of said chip; said second electrodebeing heavily doped with one semi-conductive polarity, and the remainderof said cavity being doped with the opposite semi-conductive polarity;and the dimensions of said second electrode and the doping thereof areselected to conform to the minimum of the function of the output signallinearity error versus the area of the second electrode.